In Situ Etching-Hydrolysis Strategy To Construct an In-Plane ZnIn2S4/In(OH)3 Heterojunction with Enhanced CO2 Photoreduction Performance

ACS Appl Mater Interfaces. 2024 May 29;16(21):27301-27310. doi: 10.1021/acsami.4c02158. Epub 2024 May 17.

Abstract

The in-plane heterojunctions with atomic-level thickness and chemical-bond-connected tight interfaces possess high carrier separation efficiency and fully exposed surface active sites, thus exhibiting exceptional photocatalytic performance. However, the construction of in-plane heterojunctions remains a significant challenge. Herein, we prepared an in-plane ZnIn2S4/In(OH)3 heterojunction (ZISOH) by partial conversion of ZnIn2S4 to In(OH)3 through the addition of H2O2. This in situ oxidation etching-hydrolysis approach enables the ZISOH heterojunction to not only preserve the original nanosheet morphology of ZnIn2S4 but also form an intimate interface. Moreover, generated In(OH)3 serves as an electron-accepting platform and also promotes the adsorption of CO2. As a result, the heterojunction exhibits a remarkably enhanced performance for photocatalytic CO2 reduction. The production rate and selectivity of CO reach 1760 μmol g-1 h-1 and 78%, respectively, significantly higher than those of ZnIn2S4 (842 μmol g-1 h-1 and 65%). This work puts forward a feasible and facile approach to construct in-plane heterojunctions to enhance the photocatalytic performance of two-dimensional metal sulfides.

Keywords: CO2 reduction; ZnIn2S4/In(OH)3; in situ etching−hydrolysis; in-plane heterojunction; interface; photocatalysis.