Spin-orbit torques (SOT) allow ultrafast, energy-efficient toggling of magnetization state by an in-plane charge current for applications such as magnetic random-access memory (SOT-MRAM). Tailoring the SOT vector comprising of antidamping (TAD) and fieldlike (TFL) torques could lead to faster, more reliable, and low-power SOT-MRAM. Here, we establish a method to quantify the longitudinal (TAD) and transverse (TFL) components of the SOT vector and its efficiency χAD and χFL, respectively, in nanoscale three-terminal SOT magnetic tunnel junctions (SOT-MTJ). Modulation of nucleation or switching field (BSF) for magnetization reversal by SOT effective fields (BSOT) leads to the modification of SOT-MTJ hysteresis loop behavior from which χAD and χFL are quantified. Surprisingly, in nanoscale W/CoFeB SOT-MTJ, we find χFL to be (i) twice as large as χAD and (ii) 6 times as large as χFL in micrometer-sized W/CoFeB Hall-bar devices. Our quantification is supported by micromagnetic and macrospin simulations which reproduce experimental SOT-MTJ Stoner-Wohlfarth astroid behavior only for χFL > χAD. Additionally, from the threshold current for current-induced magnetization switching with a transverse magnetic field, we show that in SOT-MTJ, TFL plays a more prominent role in magnetization dynamics than TAD. Due to SOT-MRAM geometry and nanodimensionality, the potential role of nonlocal spin Hall spin current accumulated adjacent to the SOT-MTJ in the mediation of TFL and χFL amplification merits to be explored.
Keywords: Rashba effect; Stoner−Wohlfarth astroid; antidamping torque; fieldlike torque; magnetic tunnel junction; spin Hall effect; spin−orbit torques.