Instability of Formamidinium Lead Iodide (FAPI) Deposited on a Copper Oxide Hole Transporting Layer (HTL)

ACS Appl Mater Interfaces. 2024 May 29;16(21):27936-27943. doi: 10.1021/acsami.4c03440. Epub 2024 May 14.

Abstract

Copper oxide appears to be a promising candidate for a hole transport layer (HTL) in emerging perovskite solar cells. Reasons for this are its good optical and electrical properties, cost-effectiveness, and high stability. However, is this really the case? In this study, we demonstrate that copper oxide, synthesized by a spray-coating method, is unstable in contact with formamidinium lead triiodide (FAPI) perovskite, leading to its decomposition. Using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ultraviolet-visible (UV-vis) spectrophotometry, we find that the entire copper oxide diffuses into and reacts with the FAPI film completely. The reaction products are an inactive yellow δ-FAPI phase, copper iodide (CuI), and an additional new phase of copper formate hydroxide (CH2CuO3) that has not been reported previously in the literature.

Keywords: Cu2O; formamidinium lead iodide; hole transporting layer; instability; perovskites; phase transition.