Dopant-induced Morphology of Organic Semiconductors Resulting in High Doping Performance

Jing Guo; Ping-An Chen; Shuzhang Yang; Huan Wei; Yu Liu; Jiangnan Xia; Chen Chen; Huajie Chen; Suhao Wang; Wenwu Li; Yuanyuan Hu

doi:10.1002/smtd.202400084

Dopant-induced Morphology of Organic Semiconductors Resulting in High Doping Performance

Small Methods. 2024 May 13:e2400084. doi: 10.1002/smtd.202400084. Online ahead of print.

Authors

Jing Guo^{1

2}, Ping-An Chen^{1

3

4}, Shuzhang Yang⁵, Huan Wei^{3

4}, Yu Liu^{3

4}, Jiangnan Xia^{3

4}, Chen Chen⁶, Huajie Chen⁷, Suhao Wang⁸, Wenwu Li⁵, Yuanyuan Hu^{1

3

4}

Affiliations

¹ Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China.
² School of Physics and Information Engineering, Shanxi Normal University, Taiyuan, 031000, China.
³ Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China.
⁴ International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
⁵ Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai, 200433, China.
⁶ Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China.
⁷ Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education, College of Chemistry, Xiangtan University, Xiangtan, 411105, China.
⁸ Unité de Dynamique et Structure des Matériaux Moléculaires (UDSMM), Université du Littoral Côte d'Opale, 145 Avenue Maurice Schumann, Dunkerque, 59140, France.

PMID: 38738733
DOI: 10.1002/smtd.202400084

Abstract

Doping plays a crucial role in modulating and enhancing the performance of organic semiconductor (OSC) devices. In this study, the critical role of dopants is underscored in shaping the morphology and structure of OSC films, which in turn profoundly influences their properties. Two dopants, trityl tetrakis(pentafluorophenyl) (TrTPFB) and N,N-dimethylanilinium tetrakis(pentafluorophenyl)borate (DMA-TPFB), are examined for their doping effects on poly(3-hexylthiophene) (P3HT) and PBBT-2T host OSCs. It is found that although TrTPFB exhibits higher doping efficiency, OSCs doped with DMA-TPFB achieve comparable or even enhanced electrical conductivity. Indeed, the electrical conductivity of DMA-TPFB-doped P3HT reaches over 67 S cm^-1, which is a record-high value for mixed-solution-doped P3HT. This can be attributed to DMA-TPFB inducing a higher degree of crystallinity and reduced structural disorder. Moreover, the beneficial impact of DMA-TPFB on the OSC films' morphology and structure results in superior thermoelectric performance in the doped OSCs. These findings highlight the significance of dopant-induced morphological and structural considerations in enhancing the film characteristics of OSCs, opening up a new avenue for optimization of dopant performance.

Keywords: conductivity; doping; organic semiconductors; structural changes; thermoelectric performance.

Abstract

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