Defect-free grinding of silicon nitride at high material removal rate

Heliyon. 2024 Apr 25;10(9):e30232. doi: 10.1016/j.heliyon.2024.e30232. eCollection 2024 May 15.

Abstract

Owing to the extreme hardness and toughness of sintered silicon nitride (Si3N4), the material is used in high stress and/or temperature applications such bearings, turbines, and combustion engines. Unfortunately, the same properties which make it ideal for use also make it particularly difficult to machine -- microcracks, inclusions and spalling are all common. While prior research has shown that it is possible to grind sintered Si3N4 without inducing surface damage so long as material is removed entirely under ductile flow, but grind forces associated with ductile Si3N4 material flow are so small as to render the material removal rate (MRR) impractical. Prior researchers have attempted to solve the MRR problem through laser-assisted machining. Laser ablation, by inducing a steep thermal gradient, weakens material through surface and subsurface cracks. Grinding of fractured weakened Si3N4 has been done at upwards of 50 % higher MRR. There are, however, issues with laser ablation, which prevent its widespread use. Laser ablation severely disrupts the microstructure of Si3N4. Because cracks propagate along and through grain boundaries, the irregular morphology makes accurately predicting crack growth from ablation and during subsequent grinding highly problematic. In this proof-of-concept work, researchers determined that it is possible to irradiation weaken Si3N4 without cracking it, and the material can be ground defect-free at a highly productive MRR. Findings suggest present laser-assisted machining methods which fracture weaken Si3N4 prior to grinding may not be the best way to maximize MRR.

Keywords: Defect-free grinding; Ductile flow; Silicon nitride.