Continuous Tunable Energy Band Tailoring Boosts Extending the Sensing of the Waveband Based on (InxGa1- x)2O3 Solar-Blind Photodetectors

Zhaoying Xi; Zeng Liu; Sihan Yan; Maosheng Liu; Jia-Han Zhang; Xin Guo; Lei Li; Wanyu Ma; Shan Li; Lili Yang; Mingming Jiang; Weihua Tang

doi:10.1021/acs.jpclett.4c00812

Continuous Tunable Energy Band Tailoring Boosts Extending the Sensing of the Waveband Based on (In_xGa_{1- x})₂O₃ Solar-Blind Photodetectors

J Phys Chem Lett. 2024 May 9;15(18):4906-4912. doi: 10.1021/acs.jpclett.4c00812. Epub 2024 Apr 29.

Authors

Zhaoying Xi¹, Zeng Liu², Sihan Yan¹, Maosheng Liu³, Jia-Han Zhang², Xin Guo⁴, Lei Li¹, Wanyu Ma¹, Shan Li¹, Lili Yang¹, Mingming Jiang³, Weihua Tang¹

Affiliations

¹ Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, People's Republic of China.
² School of Electronic Information Engineering, Inner Mongolia University, Hohhot, Inner Mongolia 010021, People's Republic of China.
³ College of Science, MIIT Key Laboratory of Aerospace Information Materials and Physics, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu 211106, People's Republic of China.
⁴ School of Information and Communication Engineering, North University of China, Taiyuan, Shanxi 030051, People's Republic of China.

PMID: 38683690
DOI: 10.1021/acs.jpclett.4c00812

Abstract

Rising wide bandgap semiconductor gallium oxide (Ga₂O₃) displays huge potential in performing solar-blind photodetection, with constraint in narrow detection wavebands in nature, whereas bandgap modulation through the introduction of exotic atoms into Ga₂O₃ has an essential effect on the tunable performance of photodetectors and the detection waveband. Here, a novel method for the preparation of (In_xGa_1-x)₂O₃ alloy films is proposed, and the continuous tuning of the bandgap in the range of 3.70-4.99 eV is achieved by varying the In-doping content. Alloy-based metal-semiconductor-metal photodetectors were fabricated, achieving a peak responsivity between 254 and 295 nm, superior performance compared to Ga₂O₃ photodetectors, with a photo-to-dark current ratio as high as 10⁶, and a better optical image-sensing capability. This study offers new insight for high-performance detection of full solar-blind waveband ultraviolet light.