Large thermoelectric transport in magnetically coupled CrI3/1T-MoS2vdW heterostructure via spin-charge interconversion

Anil Kumar Singh; Weibo Gao; Pritam Deb

doi:10.1088/1361-648X/ad4247

Large thermoelectric transport in magnetically coupled CrI₃/1T-MoS₂vdW heterostructure via spin-charge interconversion

J Phys Condens Matter. 2024 May 3;36(30). doi: 10.1088/1361-648X/ad4247.

Authors

Anil Kumar Singh¹, Weibo Gao², Pritam Deb¹

Affiliations

¹ Department of Physics, Tezpur University (Central University), Tezpur 784028, India.
² Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 639798, Singapore.

PMID: 38653260
DOI: 10.1088/1361-648X/ad4247

Abstract

Low-dimensional materials with prominent thermoelectric (TE) effect play a pivotal role in realizing state-of-the-art nanoscale TE devices. The fusion of TE effect with the magnetism through seamless integration of TE and magnetic materials in the 2D limit offers access to control longitudinal as well as transverse TE properties via magnetic proximity effect. Herein, we design a van der Waals (vdW) heterostructure of metallic 1T-MoS₂with promising TE properties and a layer-dependent magnetic CrI₃material. The result highlights exotic electronic and magnetic configurations of the designed monolayer-CrI₃/1T-MoS₂vdW heterostructure, which show magnetically-coupled TE characteristics. The observed remarkable magnetic proximity stems from large magnetic anisotropy energy and spin polarization, which are found to be 2.21 meV Cr^-1and 12.30%, respectively. To this end, the semiconducting CrI₃layer with intrinsic magnetism leads to efficient control and tunability of the observed spin-correlated anomalous Nernst effect. Moreover, a large dimensionless figure of merit of ∼6 and a power factor of∼3.8×1011/τ∘ Wm-1K-2s-1near the Fermi level at 300 K endorse the rejuvenated TE effect. The strong relativistic spin-orbit coupling validates the significant correlation of TE properties with intrinsic magnetic configuration. The present study underscores the significance of the magnetic proximity-governed TE effect in vdW heterostructures to engineer low-dimensional TE devices.

Keywords: 2D vdW heterostructure; inverse spin Hall effect; large built-in electric field; magnetic anisotropy energy; magnetic proximity; spin polarization; thermoelectric transport.