In situ one step growth of amorphous tin oxide electron transport layer for high-performance perovskite solar cells

Wenlin Du; Zhe Wan; Jingyi Zhu; Xin Liu; Li Chen; Shuxia Li; Ning Kang; Chenglong Wang

doi:10.1039/d4ra01724b

In situ one step growth of amorphous tin oxide electron transport layer for high-performance perovskite solar cells

RSC Adv. 2024 Apr 19;14(18):12650-12657. doi: 10.1039/d4ra01724b. eCollection 2024 Apr 16.

Authors

Wenlin Du¹, Zhe Wan¹, Jingyi Zhu¹, Xin Liu¹, Li Chen¹, Shuxia Li¹, Ning Kang¹, Chenglong Wang¹

Affiliation

¹ National Engineering Research Center for Technology and Equipment of Green Coating, Lanzhou Jiaotong University Lanzhou 730070 China 826634307@qq.com clwang@lzjtu.edu.cn.

Abstract

Tin oxide used in electron transport layer (ETL) exhibits key role in transmitting electrons and blocking holes in perovskite solar cells (PSCs) device. However, crystal tin oxide nanoparticles (NPs) become necessary to form SnO₂ film by method of spin-coating, resulting in possible surface defect and cracks among SnO₂ NPs, corresponding to unsatisfied performance PSCs. Herein, an amorphous tin oxide thin film is creatively in situ grew onto Fluorine-doped Tin Oxide (FTO) substrate as ETL. The designed solar cell device with structure of FTO/SnO₂/MAPbI₃/Sprio-OMeTAD/Ag owns a champion photoelectric conversion efficiency (PCE) up to 17.64%, 76.20% of filling coefficient (FF), and 1.09 V of open-circuit voltage (V_oc), in comparing with 16.43%, 64.35% and 1.05 V for control group (crystal tin oxide as ETL), respectively. Besides, the champion device keeps 83.33% of initial PCE under nitrogen (N₂) condition for one month, in comparison with 76.09% for control group. This work provides a viable strategy for facile preparing amorphous tin oxide film based ETL in perovskite solar cells.