Advancements in photonic integration technology have enabled the effective excitation of simulated Brillouin scattering (SBS) on a single chip, boosting Brillouin-based applications such as microwave photonic signal processing, narrow-linewidth lasers, and optical sensing. However, on-chip circuits still require large pump power and centimeter-scale waveguide length to achieve a considerable Brillouin gain, making them both power-inefficient and challenging for integration. Here, we exploit the slow-light effect to significantly enhance SBS, presenting the first, to the best of our knowledge, demonstration of a slow-light Brillouin-active waveguide on the silicon-on-insulator (SOI) platform. By integrating a Bragg grating with a suspended ridge waveguide, a 2.1-fold enhancement of the forward Brillouin gain coefficient is observed in a 1.25 mm device. Furthermore, this device shows a Brillouin gain coefficient of 1,693 m-1W-1 and a mechanical quality factor of 1,080. The short waveguide length reduces susceptibility to inhomogeneous broadening, enabling the simultaneous achievement of a high Brillouin gain coefficient and a high mechanical quality factor. This approach introduces an additional dimension to enhance acousto-optic interaction efficiency in the SOI platform and holds significant potential for microwave photonic filters and high spatial resolution sensing.