PIN diodes, due to their simple structure and variable resistance characteristics under high-frequency high-power excitation, are often used in radar front-end as limiters to filter high power microwaves (HPM) to prevent its power from entering the internal circuit and causing damage. This paper carries out theoretical derivation and research on the HPM effects of PIN diodes, and then uses an optimized neural network algorithm to replace traditional physical modeling to calculate and predict two types of HPM limiting indicators of PIN diode limiters. We proposes a neural network model for each of the following two prediction scenarios: in the scenario of time-junction temperature curves under different HPM irradiation, the weighted mean squared error (MSE) between the predicted values from the test dataset and the simulated values is below 0.004. While in predicting PIN limiter's power limitation threshold, insertion loss, and maximum isolation under different HPM irradiation, the MSE of the test set prediction values and simulation values are all less than 0.03. The method proposed in this research, which applies an optimized neural network algorithm to replace traditional physical modeling algorithms for studying the high-power microwave effects of PIN diode limiters, significantly improves the computational and simulation speed, reduces the calculation cost, and provides a new method for studying the high-power microwave effects of PIN diode limiters.
Keywords: GoogLeNet; HPM effect; PIN diode; TCAD; deep learning (DL).
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