Wide-Bandgap Semiconductors for Radiation Detection: A Review

Materials (Basel). 2024 Mar 1;17(5):1147. doi: 10.3390/ma17051147.

Abstract

In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most common 4H-SiC, GaN, and β-Ga2O3 devices used for radiation detection are described. The 4H-SiC and GaN devices have already achieved exceptional results in the detection of alpha particles and neutrons, thermal neutrons in particular. While β-Ga2O3 devices have not yet reached the same level of technological maturity (compared to 4H-SiC and GaN), their current achievements for X-ray detection indicate great potential and promising prospects for future applications.

Keywords: detectors; radiation; wide-bandgap semiconductors.

Publication types

  • Review

Grants and funding

This research received no external funding.