Predicting the defect levels of transition metal (TM) dopants in the band gap of crystals is critical in determining the charge states of TM dopants and explaining their electronic and optical properties. By analyzing the calculated charge transition levels and the crystal-field strengths of all the 3d-TM ions in several insulators, we demonstrate that the variation trend of the 3d-TM dopants in a crystal is a scaling of the variation of 3d-electron binding energies (ionization potential) of the free TM ions corrected by adding the contribution of the 3d-orbital's crystal-field splitting. We therefore develop a model to predict the relative location of TM ions' defect levels in the band gap from the defect level and crystal-field splitting of a reference TM ion in the host of concern. The model is applied to predict the defect levels of the series of TM ions in β-Ga2O3 and ZnO, which have moderate to small band gaps, making some of the levels fall into the conduction or valence bands. These results show that the model may serve as a quick reference for related material design and optimization.