The CO2 photocatalytic conversion efficiency of the semiconductor photocatalyst is always inhibited by the sluggish charge transfer and undesirable CO2 affinity. In this work, we prepare a series of K-doped In2O3 catalysts with concomitant oxygen vacancies (OV) via a hydrothermal method, followed by a low-temperature sintering treatment. Owing to the synergistic effect of K doping and OV, the charge separation and CO2 affinity of In2O3 are synchronously promoted. Particularly, when P/P0 = 0.010, at room temperature, the CO2 adsorption capacity of the optimal K-doped In2O3 (KIO-3) is 2336 cm3·g-1, reaching about 6000 times higher than that of In2O3 (0.39 cm3·g-1). As a result, in the absence of a cocatalyst or sacrificial agent, KIO-3 exhibits a CO evolution rate of 3.97 μmol·g-1·h-1 in a gas-solid reaction system, which is 7.6 times that of pristine In2O3 (0.52 μmol·g-1·h-1). This study provides a novel approach to the design and development of efficient photocatalysts for CO2 conversion by element doping.