Trifluoromethyl Fluorosulfonate (CF3OSO2F) and Trifluoromethoxy Sulfur Pentafluoride (CF3OSF5) - Two Gaseous Sulfur(VI) Compounds with Insulating Properties

Paul Golz; Gesa H Dreyhsig; Holger Pernice; Thomas Drews; Jan H Nissen; Helmut Beckers; Simon Steinhauer; Anja Wiesner; Sebastian Riedel

doi:10.1002/chem.202400258

Trifluoromethyl Fluorosulfonate (CF₃OSO₂F) and Trifluoromethoxy Sulfur Pentafluoride (CF₃OSF₅) - Two Gaseous Sulfur(VI) Compounds with Insulating Properties

Chemistry. 2024 Apr 11;30(21):e202400258. doi: 10.1002/chem.202400258. Epub 2024 Feb 27.

Authors

Paul Golz¹, Gesa H Dreyhsig¹, Holger Pernice¹, Thomas Drews¹, Jan H Nissen¹, Helmut Beckers¹, Simon Steinhauer¹, Anja Wiesner¹, Sebastian Riedel¹

Affiliation

¹ Fachbereich Biologie, Chemie, Pharmazie, Institut für Chemie und Biochemie - Anorganische Chemie, Freie Universität Berlin, Fabeckstr. 34/36, 14195, Berlin, Germany.

PMID: 38329888
DOI: 10.1002/chem.202400258

Abstract

In this work, we analyzed trifluoromethyl fluorosulfonate (CF₃OSO₂F) and trifluoromethoxy sulfur pentafluoride (CF₃OSF₅) regarding their potential use as dielectrics by investigating some of their intrinsic and extrinsic properties. Both compounds show a higher breakdown voltage than SF₆ with averaged relative breakdown voltages of 1.3±0.2 for CF₃OSO₂F and 1.4±0.2 for CF₃OSF₅ compared to SF₆ with 1.0. Like the dielectric (CF₃)₂CFCN, both compounds decompose during the breakdown process. The decomposition products were analyzed by IR spectroscopy and GCIR methods. Furthermore, the molecular structures of both gaseous compounds CF₃OSO₂F and CF₃OSF₅ have been determined by in situ crystallization, and their physical properties were determined as well.

Keywords: SF6 substitutes; decomposition pathways; dielectric properties; solid state structures; trifluoromethoxylated sulfur(VI) fluorides.