Magnetoresistance properties in nickel-catalyzed, air-stable, uniform, and transfer-free graphene

Bo-Yu Chen; Bo-Wei Chen; Wu-Yih Uen; Chi Chen; Chiashain Chuang; Dung-Sheng Tsai

doi:10.1088/1361-6528/ad2381

Magnetoresistance properties in nickel-catalyzed, air-stable, uniform, and transfer-free graphene

Nanotechnology. 2024 Feb 28;35(20). doi: 10.1088/1361-6528/ad2381.

Authors

Bo-Yu Chen^{1

2}, Bo-Wei Chen¹, Wu-Yih Uen¹, Chi Chen³, Chiashain Chuang^{1

4}, Dung-Sheng Tsai^{1

4}

Affiliations

¹ Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan, 32023, Taiwan.
² Department of Physics, National Taiwan University, Taipei, 10617, Taiwan.
³ Research Center for Applied Science, Academia Sinica, Taipei, 11529, Taiwan.
⁴ Research Center for Semiconductor Materials and Advanced Optics, Chung Yuan Christian University, Taoyuan, 32023, Taiwan.

PMID: 38286015
DOI: 10.1088/1361-6528/ad2381

Abstract

A transfer-free graphene with high magnetoresistance (MR) and air stability has been synthesized using nickel-catalyzed atmospheric pressure chemical vapor deposition. The Raman spectrum and Raman mapping reveal the monolayer structure of the transfer-free graphene, which has low defect density, high uniformity, and high coverage (>90%). The temperature-dependent (from 5 to 300 K) current-voltage (I-V) and resistance measurements are performed, showing the semiconductor properties of the transfer-free graphene. Moreover, the MR of the transfer-free graphene has been measured over a wide temperature range (5-300 K) under a magnetic field of 0 to 1 T. As a result of the Lorentz force dominating above 30 K, the transfer-free graphene exhibits positive MR values, reaching ∼8.7% at 300 K under a magnetic field (1 Tesla). On the other hand, MR values are negative below 30 K due to the predominance of the weak localization effect. Furthermore, the temperature-dependent MR values of transfer-free graphene are almost identical with and without a vacuum annealing process, indicating that there are low density of defects and impurities after graphene fabrication processes so as to apply in air-stable sensor applications. This study opens avenues to develop 2D nanomaterial-based sensors for commercial applications in future devices.

Keywords: 2D nanomaterial; atmospheric pressure chemical vapor deposition (APCVD); graphene; magnetoresistance (MR); transfer-free.