Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals

V B Shmagin; A N Yablonskiy; M V Stepikhova; D V Yurasov; A N Mikhaylov; D I Tetelbaum; E E Rodyakina; E E Morozova; D V Shengurov; S A Kraev; P A Yunin; A I Belov; A V Novikov

doi:10.1088/1361-6528/ad1f8a

Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals

Nanotechnology. 2024 Feb 2;35(16). doi: 10.1088/1361-6528/ad1f8a.

Authors

V B Shmagin¹, A N Yablonskiy¹, M V Stepikhova¹, D V Yurasov¹, A N Mikhaylov², D I Tetelbaum², E E Rodyakina^{3

4}, E E Morozova¹, D V Shengurov¹, S A Kraev¹, P A Yunin¹, A I Belov², A V Novikov^{1

2}

Affiliations

¹ Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia.
² Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia.
³ Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia.
⁴ Physical Department, Novosibirsk State University, 630090 Novosibirsk, Russia.

PMID: 38232400
DOI: 10.1088/1361-6528/ad1f8a

Abstract

Room temperature lateral p⁺-i-n⁺light-emitting diodes (LEDs) with photonic crystals embedded in the i-region were fabricated on structures with Ge(Si) self-assembled islands and their optical properties were investigated. The use of preliminary amorphization and solid phase epitaxy of the implanted p⁺and n⁺contact regions made it possible to reduce the impurity activation temperature from 800 °С-1100 °С to 600 °С, which corresponds to the growth temperature of Ge(Si) islands. This resulted in a significant reduction of the detrimental effect of the high-temperature annealing used for diode formation on the intensity and spectral position of the luminescence signal from the islands. It was shown that significant enhancement (more than an order of magnitude) of room temperature electroluminescence of Ge(Si) islands in the spectral range of 1.3-1.55μm can be achieved due to their interaction with different modes of the photonic crystals. The measured radiation power of the obtained diodes in the spectral range of 1.3-1.55μm exceeds 50 pW at a pump current of 8 mA, which is an order of magnitude higher than the previously achieved values for micro-LEDs with Ge(Si) nanoislands. The obtained results open up new possibilities for the realization of silicon-based light emitting devices operating at telecommunication wavelengths.

Keywords: SiGe quantum dots; electroluminescence; light emitting diodes; photonic crystals; silicon photonics; ‘bound state in continuum’ modes.