Memristors are regarded as promising candidates for breaking the problems including high off-chip memory access delays and the hash rate cost of frequent data moving induced by algorithms for data-intensive applications of existing computational systems. Recently, organic-inorganic halide perovskites (OIHPs) have been recognized as exceptionally favorable materials for memristors due to ease of preparation, excellent electrical conductivity, and structural flexibility. However, research on OIHP-based memristors focuses on modulating resistive switching (RS) performance through electric fields, resulting in difficulties in moving away from complex external circuits and wire connections. Here, a multilayer memristor has been constructed with eutectic gallium and indium (EGaIn)/ MAPbI3 /poly(3,4-ethylenedioxythiophene): poly(4-styrenesulphonate) (PEDOT: PSS)/indium tin oxide (ITO) structure, which exhibits reproducible and reliable bipolar RS with low SET/RESET voltages, stable endurance, ultrahigh average ON/OFF ratio, and excellent retention. Importantly, based on ion migration activated by sound-driven piezoelectric effects, the device exhibits a stable acoustic response with an average ON/OFF ratio greater than 103 , thus realizing non-contact, multi-signal, and far-field control in RS modulation. This study provides a single-structure multifunctional memristor as an integrated architecture for sensing, data storage, and computing.
Keywords: conductive filaments; ion migration; memristors; organic-inorganic halide perovskites; piezo-acoustic resistive switching.
© 2024 The Authors. Advanced Science published by Wiley-VCH GmbH.