Suppression of Randomness in Electrically Pumped Random Lasing from a ZnO Film-Based Light-Emitting Device on Silicon

Shuming Jiang; Chengtao Xia; Ran Ji; Houwei Pang; Dongsheng Li; Deren Yang; Xiangyang Ma

doi:10.1021/acsami.3c16983

Suppression of Randomness in Electrically Pumped Random Lasing from a ZnO Film-Based Light-Emitting Device on Silicon

ACS Appl Mater Interfaces. 2024 Jan 24;16(3):3719-3725. doi: 10.1021/acsami.3c16983. Epub 2024 Jan 9.

Authors

Shuming Jiang¹, Chengtao Xia¹, Ran Ji¹, Houwei Pang¹, Dongsheng Li¹, Deren Yang¹, Xiangyang Ma¹

Affiliation

¹ State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.

PMID: 38193427
DOI: 10.1021/acsami.3c16983

Abstract

We report on the suppressed randomness in electrically pumped random lasing (RL) from a light-emitting device (LED) based on a metal-insulator-semiconductor (MIS) structure of Au/SiO_x (x < 2)/ZnO on a silicon substrate, by means of patterning the light-emitting ZnO polycrystalline film into a number of square blocks separated by streets that are filled with the SiO_x insulator. It is found that the RL modes can be remarkably reduced by shrinking the blocks in the absence of interblock optical coupling. Meanwhile, with the imposition of interblock optical coupling by shrinking the streets, the RL modes can be further reduced, and more importantly, the strongest mode wavelength is stabilized around 380 nm, where the ZnO film exhibits the largest optical gain.

Keywords: ZnO; electroluminescence; light-emitting device; metal−insulator−semiconductor; random lasing.