Highly efficient and stable Cs3Mn0.93Zn0.07Br5@SiO2 for wide color gamut backlight displays

Chun Sun; Zhihui Deng; Xiaohui Liu; Fuhao Zhang; Kai Lian; Yiwei Zhao; Hu Zhang; Jiachen Han; Mingming Luo

doi:10.1039/d3dt03874b

Highly efficient and stable Cs₃Mn_0.93Zn_0.07Br₅@SiO₂ for wide color gamut backlight displays

Dalton Trans. 2024 Jan 30;53(5):2153-2158. doi: 10.1039/d3dt03874b.

Authors

Chun Sun^{1

2}, Zhihui Deng^{1

2}, Xiaohui Liu^{3

4}, Fuhao Zhang^{1

2}, Kai Lian^{1

2}, Yiwei Zhao^{1

2}, Hu Zhang^{1

2}, Jiachen Han^{1

2}, Mingming Luo^{1

2}

Affiliations

¹ State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China. cs@hebut.edu.cn.
² Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
³ Key Laboratory of Magnetism and Magnetic Materials Autonomous Region, Baotou Teachers' College, Inner Mongolia University of Science and Technology, 3 Kexue Road, Baotou, 014030, P.R. China.
⁴ Zhejiang Ruico Advanced Material Co., Ltd, No. 188 Liangshan Road, Huzhou, 313018, PR China.

PMID: 38189118
DOI: 10.1039/d3dt03874b

Abstract

Mn-based perovskites have become a new candidate material for backlight display applications. However, low efficiency and poor stability are the key problems limiting the application of Mn-based perovskites. In this work, Zn-doped and SiO₂-encapsulated Cs₃MnBr₅, denoted as Cs₃Mn_0.93Zn_0.07Br₅@SiO₂ (CMZBS), was successfully synthesized to improve the photoluminescence quantum yield (PLQY) and stability. After Zn doping, the PLQY increased from 51% to 72% due to the reduction in the energy transfer between [MnBr₄]^2-. The PLQY can be further improved to 80% after coating SiO₂. Compared with Cs₃MnBr₅ (CMB), CMZBS showed better stability against thermal, air, light, and polar solvents (ethanol and isopropanol). In addition, a white LED (WLED) device with a CIE of (0.323, 0.325) was fabricated by integrating CMZBS and the red phosphor K₂SiF₆:Mn⁴⁺ on a 465 nm blue GaN chip, which exhibited a high luminous efficiency of 92 lm W^-1 and excellent stability, demonstrating its great potential application in wide color gamut displays.