Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport

Artem Musiienko; Fengjiu Yang; Thomas William Gries; Chiara Frasca; Dennis Friedrich; Amran Al-Ashouri; Elifnaz Sağlamkaya; Felix Lang; Danny Kojda; Yi-Teng Huang; Valerio Stacchini; Robert L Z Hoye; Mahshid Ahmadi; Andrii Kanak; Antonio Abate

doi:10.1038/s41467-023-44418-1

Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport

Nat Commun. 2024 Jan 5;15(1):316. doi: 10.1038/s41467-023-44418-1.

Authors

Artem Musiienko¹, Fengjiu Yang^{2

3}, Thomas William Gries^{2

4}, Chiara Frasca^{2

4}, Dennis Friedrich⁵, Amran Al-Ashouri², Elifnaz Sağlamkaya⁶, Felix Lang⁷, Danny Kojda⁸, Yi-Teng Huang^{9

10}, Valerio Stacchini², Robert L Z Hoye¹⁰, Mahshid Ahmadi¹¹, Andrii Kanak^{12

13}, Antonio Abate^{2

4}

Affiliations

¹ Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany. artem.musiienko@helmholtz-berlin.de.
² Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany.
³ Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden, CO, 80401, USA.
⁴ Department of Chemistry, University of Bielefeld, Bielefeld, Germany.
⁵ Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109, Berlin, Germany.
⁶ Disordered Semiconductor Optoelectronics, Institute of Physics and Astronomy, University of Potsdam, Karl-Liebknecht-Str. 24-25, 14476, Potsdam-Golm, Germany.
⁷ ROSI Freigeist Juniorgroup, Institute of Physics and Astronomy, University of Potsdam, Karl-Liebknecht-Str. 24-25, 14476, Potsdam-Golm, Germany.
⁸ Department Dynamics and Transport in Quantum Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109, Berlin, Germany.
⁹ Cavendish Laboratory, University of Cambridge, JJ Thomson Ave, Cambridge, CB3 0HE, UK.
¹⁰ Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford, OX1 3QR, UK.
¹¹ Institute for Advanced Materials and Manufacturing, Department of Materials Science and Engineering, The University of Tennessee Knoxville, Knoxville, TN, 37996, USA.
¹² Laboratory of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Zürich, Switzerland.
¹³ Department of General Chemistry and Chemistry of Materials, Yuriy Fedkovych Chernivtsi National University, Chernivtsi, 58012, Ukraine.

Abstract

The knowledge of minority and majority charge carrier properties enables controlling the performance of solar cells, transistors, detectors, sensors, and LEDs. Here, we developed the constant light induced magneto transport method which resolves electron and hole mobility, lifetime, diffusion coefficient and length, and quasi-Fermi level splitting. We demonstrate the implication of the constant light induced magneto transport for silicon and metal halide perovskite films. We resolve the transport properties of electrons and holes predicting the material's effectiveness for solar cell application without making the full device. The accessibility of fourteen material parameters paves the way for in-depth exploration of causal mechanisms limiting the efficiency and functionality of material structures. To demonstrate broad applicability, we further characterized twelve materials with drift mobilities spanning from 10^-3 to 10³ cm²V^-1s^-1 and lifetimes varying between 10^-9 and 10^-3 seconds. The universality of our method its potential to advance optoelectronic devices in various technological fields.