Characteristics of tunable aluminum-doped Ga2O3thin films and photodetectors

Si-Tong Ding; Yu-Chang Chen; Qiu-Jun Yu; Guang Zeng; Cai-Yu Shi; Lei Shen; Xue-Feng Zhao; Hong-Liang Lu

doi:10.1088/1361-6528/ad1afc

Characteristics of tunable aluminum-doped Ga₂O₃thin films and photodetectors

Nanotechnology. 2024 Jan 24;35(15). doi: 10.1088/1361-6528/ad1afc.

Authors

Si-Tong Ding¹, Yu-Chang Chen¹, Qiu-Jun Yu¹, Guang Zeng¹, Cai-Yu Shi¹, Lei Shen¹, Xue-Feng Zhao¹, Hong-Liang Lu^{1

2}

Affiliations

¹ State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, People's Republic of China.
² Jiashan Fudan Institute, Jiaxing, Zhejiang Province, People's Republic of China.

PMID: 38176077
DOI: 10.1088/1361-6528/ad1afc

Abstract

Aluminum-doped Ga₂O₃(AGO) thin films were prepared by plasma-enhanced atomic layer deposition (PE-ALD). The growth mechanism, surface morphology, chemical composition, and optical properties of AGO films were systematically investigated. The bandgap of AGO films can be theoretically set between 4.65 and 6.8 eV. Based on typical AGO films, metal-semiconductor-metal photodetectors (PDs) were created, and their photoelectric response was examined. The preliminary results show that PE-ALD grown AGO films have high quality and tunable bandgap, and AGO PDs possess superior characterizations to undoped films. The AGO realized using PE-ALD is expected to be an important route for the development of a new generation of gallium oxide-based photodetectors into the deep-ultraviolet.

Keywords: aluminum-doped Ga2O3; growth mechanism; photodetector; plasma-enhanced atomic layer deposition; tunable bandgap.