Enhanced electrical properties of amorphous In-Sn-Zn oxides through heterostructuring with Bi2Se3 topological insulators

Chih-Chiang Wang; An-Ya Lo; Ming-Che Cheng; Yu-Sung Chang; Han-Chang Shih; Fuh-Sheng Shieu; Tzu-Hsien Tseng; He-Ting Tsai

doi:10.1038/s41598-023-50809-7

Enhanced electrical properties of amorphous In-Sn-Zn oxides through heterostructuring with Bi₂Se₃ topological insulators

Sci Rep. 2024 Jan 2;14(1):195. doi: 10.1038/s41598-023-50809-7.

Authors

Chih-Chiang Wang^#¹, An-Ya Lo^#², Ming-Che Cheng³, Yu-Sung Chang³, Han-Chang Shih^{4

5}, Fuh-Sheng Shieu³, Tzu-Hsien Tseng⁶, He-Ting Tsai⁶

Affiliations

¹ Department of Chemical and Materials Engineering, National Chin-Yi University of Technology, Taichung, 411030, Taiwan. wilbur0913@gmail.com.
² Department of Chemical and Materials Engineering, National Chin-Yi University of Technology, Taichung, 411030, Taiwan.
³ Department of Materials Science and Engineering, National Chung Hsing University, Taichung, 40227, Taiwan.
⁴ Department of Materials Science and Engineering, National Chung Hsing University, Taichung, 40227, Taiwan. hcshih@mx.nthu.edu.tw.
⁵ Department of Chemical and Materials Engineering, Chinese Culture University, Taipei, 11114, Taiwan. hcshih@mx.nthu.edu.tw.
⁶ Instrument Center, The Office of Research and Development, National Chung Hsing University, Taichung, 40227, Taiwan.

^# Contributed equally.

Abstract

Amorphous indium tin zinc oxide (a-ITZO)/Bi₂Se₃ nanoplatelets (NPs) were fabricated using a two-step procedure. First, Bi₂Se₃ NPs were synthesized through thermal chemical vapor deposition at 600 °C on a glass substrate, and then a-ITZO was deposited on the surface of the Bi₂Se₃ NPs via magnetron sputtering at room-temperature. The crystal structures of the a-ITZO/Bi₂Se₃ NPs were determined via X-ray diffraction spectroscopy and high-resolution transmission electron microscopy. The elemental vibration modes and binding energies were measured using Raman spectroscopy and X-ray photoelectron spectroscopy. The morphologies were examined using field-emission scanning electron microscopy. The electrical properties of the a-ITZO/Bi₂Se₃ NPs were evaluated using Hall effect measurements. The bulk carrier concentration of a-ITZO was not affected by the heterostructure with Bi₂Se₃. In the case of the Bi₂Se₃ heterostructure, the carrier mobility and conductivity of a-ITZO were increased by 263.6% and 281.4%, respectively, whereas the resistivity of a-ITZO was reduced by 73.57%. This indicates that Bi₂Se₃ significantly improves the electrical properties of a-ITZO through its heterostructure, expanding its potential applications in electronic and thermoelectric devices.

Grants and funding

MOST 110-2221-E-034-006/National Science and Technology Council