Chiral anomaly and Weyl orbit in three-dimensional Dirac semimetal Cd3As2grown on Si

Wei-Chen Lin; Peng-Ying Tsai; Jia-Zhu Zou; Jie-Ying Lee; Chun-Wei Kuo; Hsin-Hsuan Lee; Ching-Yang Pan; Cheng-Hsueh Yang; Sheng-Zong Chen; Jyh-Shyang Wang; Pei-Hsun Jiang; Chi-Te Liang; Chiashain Chuang

doi:10.1088/1361-6528/ad1941

Chiral anomaly and Weyl orbit in three-dimensional Dirac semimetal Cd₃As₂grown on Si

Nanotechnology. 2024 Feb 1;35(16). doi: 10.1088/1361-6528/ad1941.

Authors

Wei-Chen Lin^{1

2}, Peng-Ying Tsai³, Jia-Zhu Zou⁴, Jie-Ying Lee⁴, Chun-Wei Kuo⁵, Hsin-Hsuan Lee⁶, Ching-Yang Pan⁷, Cheng-Hsueh Yang³, Sheng-Zong Chen⁴, Jyh-Shyang Wang^{6

8}, Pei-Hsun Jiang⁷, Chi-Te Liang^{3

4}, Chiashain Chuang^{5

8}

Affiliations

¹ Taiwan International Graduate Program, Academia Sinica, Taipei 115, Taiwan.
² Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan.
³ Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan.
⁴ National Taiwan University, Taipei 106, Taiwan.
⁵ Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan.
⁶ Department of Physics, Chung Yuan Christian University, Taoyuan 320, Taiwan.
⁷ Department of Physics, National Taiwan Normal University 106, Taiwan.
⁸ Research Center for Semiconductor Materials and Advanced Optics, Chung Yuan Christian University, Taoyuan, 320, Taiwan.

PMID: 38154139
DOI: 10.1088/1361-6528/ad1941

Abstract

Preparing Cd₃As₂, which is a three-dimensional (3D) Dirac semimetal in certain crystal orientation, on Si is highly desirable as such a sample may well be fully compatible with existing Si CMOS technology. However, there is a dearth of such a study regarding Cd₃As₂films grown on Si showing the chiral anomaly. Here,for the first time, we report the novel preparation and fabrication technique of a Cd₃As₂(112) film on a Si (111) substrate with a ZnTe (111) buffer layer which explicitly shows the chiral anomaly with a nontrivial Berry's phase ofπ. Despite the Hall carrier density (n3D≈9.42×1017cm^-3) of our Cd₃As₂film, which is almost beyond the limit for the portents of a 3D Dirac semimetal to emerge, we observe large linear magnetoresistance in a perpendicular magnetic field and negative magnetoresistance in a parallel magnetic field. These results clearly demonstrate the chiral magnetic effect and 3D Dirac semimetallic behavior in our silicon-based Cd₃As₂film. Our tailoring growth of Cd₃As₂on a conventional substrate such as Si keeps the sample quality, while also achieving a low carrier concentration.

Keywords: Cd3As2; Si CMOS; chiral anomaly; weak antilocalization.