Direct current plasma enhanced chemical vapor deposition (CVD) was employed to create polycrystalline diamond films from CH4/H2gaseous mixture at 98 mbar pressure and various substrate temperatures between 720 °C and 960 °C. The Si chips with patterns of periodic masked and open seeded zones were used as substrates. The mask free seeded areas evolved into polycrystalline diamond films after CVD process. The diamond crystallites of the films featured single crystal ordering individually with distinct cubic (100) or octahedral (111) facets on the film surfaces. Notably, specific growth conditions were determined for obtaining diamond films composed of the crystallites of nanometre and micrometre scale. These conditions are differing from those observed for non-pattern-prepared Si substrates. The nano-crystalline diamonds emerged within the 4.5-5 A current range, with growth conditions involving 3% CH4/H2mixture at 98 mbar. The micro-crystalline diamonds (MCDs) predominantly characterized by well-developed rectangular (100) crystal faces on the film surface were successfully grown with current settings of 5.5-6 A, under 3% CH4/H2mixture at 98 mbar. Furthermore, MCDs characterized by entirely crystalline (111) diamond faces forming CVD film surface were attained within a growth parameter range of 4.5-5.8 A, employing 3% CH4/H2mixture for certain samples, or alternatively, utilizing 5 A with a 1.5% CH4/H2mixture for others. Upon thorough evaluation, it was established that SiO2, TiO2, and Cr masks are well-suited materials for the planar patterning of both nano- and micro-crystalline diamond films, and the bottom-up approach can pave the way for the production of diamond planar structures through CVD, facilitated by electron beam lithography (EBL).
Keywords: bottom-up approach; chemical vapor deposition (CVD); diamond.
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