Subthreshold slope below 60 mV/decade in graphene transistors induced by channel geometry at the wafer-scale

Mircea Dragoman; Adrian Dinescu; Silviu Vulpe; Daniela Dragoman

doi:10.1088/1361-6528/ad183f

Subthreshold slope below 60 mV/decade in graphene transistors induced by channel geometry at the wafer-scale

Nanotechnology. 2024 Jan 10;35(13). doi: 10.1088/1361-6528/ad183f.

Authors

Mircea Dragoman¹, Adrian Dinescu¹, Silviu Vulpe¹, Daniela Dragoman^{2

3}

Affiliations

¹ National Research and Development Institute in Microtechnology, Str. Erou Iancu Nicolae 126A, 077190 Bucharest, Romania.
² Univ. of Bucharest, Physics Faculty, PO Box MG-11, 077125 Bucharest, Romania.
³ Academy of Romanian Scientists, Str. Ilfov 3, 050044 Bucharest, Romania.

PMID: 38134440
DOI: 10.1088/1361-6528/ad183f

Abstract

In this paper, we demonstrate experimentally that field-effect transistors with nanoconstricted graphene monolayer channels have a subthreshold swing (SS) below 60 mV/dec, which is slightly dependent on temperature. Two shapes of nanoconstricted graphene monolayers are considered: (i) a bow-tie shape, representative for a symmetric channel, and (ii) a trapezoidal shape, which illustrates an asymmetric channel. While both types of nonuniform channels are opening a bandgap in graphene, thus showing an on/off ratio of 10⁵, the SS in the graphene bow-tie channel is below 60 mV/dec in the temperature range 25 °C-44 °C.

Keywords: graphene; subthreshold; transistors.