Two-dimensional (2D) materials are promising successors for silicon transistor channels in ultimately scaled devices, necessitating significant research efforts to study their behavior at nanoscopic length scales. Unfortunately, current research has limited itself to direct patterning approaches, which limit the achievable resolution to the diffraction limit and introduce unwanted defects into the 2D material. The potential of multi-patterning to fabricate 2D materials features with unprecedented precision and low complexity at large scale is demonstrated here. By combining lithographic patterning of a mandrel and bottom-up self-expansion, this approach enables pattern resolution one order of magnitude below the lithographical resolution. In-depth characterization of the self-expansion double patterning (SEDP) process reveals the ability to manipulate the critical dimension with nanometer precision through a self-limiting and temperature-controlled oxidation process. These results indicate that the SEDP process can regain the quality and morphology of the 2D material, as shown by high-resolution microscopy and optical spectroscopy. This approach is shown to open up new avenues for research into high-performance, ultra-scaled 2D materials devices for future electronics.
Keywords: 2D materials electronics; multi‐patterning; nanosheet transistors; self‐expansion double patterning; ultra‐scaled devices.
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