Reliable synaptic plasticity of InGaZnO transistor with TiO2interlayer

Soo-Hong Jeong; Seyoung Oh; Ojun Kwon; Do Hyeong Kim; Hyun Young Seo; Woojin Park; Byungjin Cho

doi:10.1088/1361-6528/ad1540

Reliable synaptic plasticity of InGaZnO transistor with TiO₂interlayer

Nanotechnology. 2023 Dec 29;35(11). doi: 10.1088/1361-6528/ad1540.

Authors

Soo-Hong Jeong^{1

2}, Seyoung Oh^{1

2}, Ojun Kwon^{1

2}, Do Hyeong Kim^{1

2}, Hyun Young Seo^{1

2}, Woojin Park^{1

2}, Byungjin Cho^{1

2}

Affiliations

¹ Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea.
² Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea.

PMID: 38091622
DOI: 10.1088/1361-6528/ad1540

Abstract

We demonstrate an InGaZnO (IGZO)-based synaptic transistor with a TiO₂buffer layer. The structure of the synaptic transistor with TiO₂inserted between the Ti metal electrode and an IGZO semiconductor channel O₂trapping layer produces a large hysteresis window, which is crucial for achieving synaptic functionality. The Ti/TiO₂/IGZO synaptic transistor exhibits reliable synaptic plasticity features such as excitatory post-synaptic current, paired-pulse facilitation, and potentiation and depression, originating from the reversible charge trapping and detrapping in the TiO₂layer. Finally, the pattern recognition accuracy of Modified National Institute of Standards and Technology handwritten digit images was modeled using CrossSim simulation software. The simulation results present a high image recognition accuracy of ∼89%. Therefore, this simple approach using an oxide buffer layer can aid the implementation of high-performance synaptic devices for neuromorphic computing systems.

Keywords: MNIST pattern-recognition accuracy; TiO2 interlayer; indium gallium zinc oxide (IGZO); synaptic plasticity; synaptic transistors.