High performance photodetector based on CdS/CdS0.42Se0.58nanobelts heterojunction

Ran Ma; Qiuhong Tan; Yingkai Liu; Qianjin Wang

doi:10.1088/1361-648X/ad144f

High performance photodetector based on CdS/CdS_0.42Se_0.58nanobelts heterojunction

J Phys Condens Matter. 2023 Dec 20;36(12). doi: 10.1088/1361-648X/ad144f.

Authors

Ran Ma¹, Qiuhong Tan^{1

2}, Yingkai Liu^{1

2}, Qianjin Wang^{1

2}

Affiliations

¹ College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China.
² Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China.

PMID: 38081072
DOI: 10.1088/1361-648X/ad144f

Abstract

The ternary alloy CdS_xSe_1-xcombines the physical properties of CdS and CdSe, and its band gap can be adjusted by changing the element composition. The alloy has charming photoelectric properties as well as potential application value in photoelectric devices. In this work, the CdS/CdS_0.42Se_0.58nanobelt (NB) heterojunction device was prepared by chemical vapor deposition combined with a typical dry transfer technique. The heterojunction photodetector shows high light switching ratio of 6.79 × 10⁴, large spectral responsivity of 1260 A W^-1, high external quantum efficiency of 2.66 × 10⁵% and large detectivity of 7.19 × 10¹⁵cm Hz^1/2W^-1under 590 nm illumination and 3 V bias. Its rise and decay time is about 45/90μs. The performance of the heterojunction photodetector was comparable or even better than that of other CdS(Se) based photodetector device. The results indicate that the CdS/CdS_0.42Se_0.58NB heterojunction possesses a promising potential application in high performance photodetectors.

Keywords: CdS; CdS0.42Se0.58; heterojunction; photodetector.