Study of resistive switching behavior in HfO2nanocrystals synthesized via a low temperature hydrothermal method

Xiaozhang Chen; Heng Li; Zhaobo Tian; Yuan Zhu; Longxing Su

doi:10.1088/1361-6528/ad143e

Study of resistive switching behavior in HfO₂nanocrystals synthesized via a low temperature hydrothermal method

Nanotechnology. 2024 Jan 4;35(12). doi: 10.1088/1361-6528/ad143e.

Authors

Xiaozhang Chen¹, Heng Li¹, Zhaobo Tian¹, Yuan Zhu^{1

2}, Longxing Su^{1

3}

Affiliations

¹ School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China.
² Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Southern University of Science and Technology, Shenzhen, 518055, People's Republic of China.
³ International School of Microelectronics, Dongguan University of Technology, Dongguan, 523808, People's Republic of China.

PMID: 38081066
DOI: 10.1088/1361-6528/ad143e

Abstract

The resistive switching property in HfO₂have attracted increasing interest in recent years. In this work, amorphous HfO₂nanocrystals are synthesized by a facile hydrothermal method. Then, the as-synthesized nanocrystals are rapid thermal annealed in different atmospheres for improving the crystal quality, and monoclinic phase is determined as the main crystal structure of the annealed HfO₂. Subsequently, metal-insulator-metal structure devices based on HfO₂samples are fabricated. Electrical measurement indicates that 700 °C annealing processes in Air and Ar environments can slightly improve the bipolar resistive switching and retention behaviors. Higher annealed temperature (900 °C) will further improve the crystal quality of HfO₂, while the resistive switching and retention behaviors of the devices continuously attenuate, which can be ascribed to the reduction of the conductive filaments induced by defects.

Keywords: HfO2 nanocrystals; annealing; crystal structure; resistive switching.