Quasi-3D Model for Lateral Resonances on Homogeneous BAW Resonators

Micromachines (Basel). 2023 Oct 25;14(11):1980. doi: 10.3390/mi14111980.

Abstract

Lateral modes are responsible for the in-band spurious resonances that appear on BAW resonators, degrading the in-band filter response. In this work, a fast computational method based on the transmission line matrix (TLM) method is employed to model the lateral resonances of BAW resonators. Using the precomputed dispersion curves of Lamb waves and an equivalent characteristic impedance for the TE1 mode, a network of transmission lines is used to calculate the magnitude of field distributions on the electrodes. These characteristics are specific to the stack layer configuration. The model's implementation is based on nodal Y matrices, from which particle displacement profiles are coupled to the electric domain via piezoelectric constitutive relations. Consequently, the input impedance of the resonator is obtained. The model exhibits strong agreement with FEM simulations of FBARs and SMRs, and with measurements of several SMRs. The proposed model can provide accurate predictions of resonator input impedance, which is around 200 times faster than conventional FEM.

Keywords: BAW resonator; Film Bulk Acoustic Resonator; Lamb wave; solidly mounted resonator; spurious modes.