Controlled Synthesis of Lead-Free Double Perovskite Colloidal Nanocrystals for Nonvolatile Resistive Memory Devices

Xingyu Liu; Zhen Fan; Yuhui Zheng; Jiajia Zha; Yong Zhang; Siyuan Zhu; Zhang Zhang; Xuyan Zhang; Fei Huang; Tong Liang; Chunxia Li; Qianming Wang; Chaoliang Tan

doi:10.1021/acsami.3c12576

Controlled Synthesis of Lead-Free Double Perovskite Colloidal Nanocrystals for Nonvolatile Resistive Memory Devices

ACS Appl Mater Interfaces. 2023 Dec 6;15(48):55991-56002. doi: 10.1021/acsami.3c12576. Epub 2023 Nov 21.

Authors

Xingyu Liu¹, Zhen Fan², Yuhui Zheng¹, Jiajia Zha³, Yong Zhang⁴, Siyuan Zhu⁴, Zhang Zhang⁵, Xuyan Zhang⁵, Fei Huang¹, Tong Liang¹, Chunxia Li¹, Qianming Wang¹, Chaoliang Tan⁶

Affiliations

¹ School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China.
² Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China.
³ Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, P. R. China.
⁴ Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
⁵ Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China.
⁶ Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong SAR 999077, P. R. China.

PMID: 37987746
DOI: 10.1021/acsami.3c12576

Abstract

Although lead-free double perovskites such as Cs₂AgBiBr₆ have been widely explored, they still remain a daunting challenge for the controlled synthesis of lead-free double perovskite nanocrystals with highly tunable morphology and band structure. Here, we report the controlled synthesis of lead-free double perovskite colloidal nanocrystals including Cs₂AgBiBr₆ and Cs₂AgIn_xBi_1-xBr₆ via a facile wet-chemical synthesis method for the fabrication of high-performance nonvolatile resistive memory devices. Cs₂AgBiBr₆ colloidal nanocrystals with well-defined cuboidal, hexagonal, and triangular morphologies are synthesized through a facile wet-chemical approach by tuning the reaction temperature from 150 to 190 °C. Further incorporating indium into Cs₂AgBiBr₆ to synthesize alloyed Cs₂AgIn_xBi_1-xBr₆ nanocrystals not only can induce the indirect-to-direct bandgap transition with enhanced photoluminescence but also can improve its structural stability. After optimizing the active layers and device structure, the fabricated Ag/polymethylene acrylate@Cs₂AgIn_0.25Bi_0.75Br₆/ITO resistive memory device exhibits a low power consumption (the operating voltage is ∼0.17 V), excellent cycling stability (>10 000 cycles), and good synaptic property. Our study would enable the facile wet-chemical synthesis of lead-free double perovskite colloidal nanocrystals in a highly controllable manner for the development of high-performance resistive memory devices.

Keywords: Cs2AgBiBr6; colloidal nanocrystals; controlled synthesis; lead-free double perovskites; resistive memory devices.