Ultrahigh UV Responsivity Quasi-Two-Dimensional BixSn1-xO2 Films Achieved through Surface Reaction

Zhihao Xu; Miao Xu; Fang Chen; Rui Zhai; You Wu; Zhuan Zhao; Shusheng Pan

doi:10.3390/ma16216988

Ultrahigh UV Responsivity Quasi-Two-Dimensional Bi_xSn_1-xO₂ Films Achieved through Surface Reaction

Materials (Basel). 2023 Oct 31;16(21):6988. doi: 10.3390/ma16216988.

Authors

Zhihao Xu^{1

2}, Miao Xu^{1

2

3}, Fang Chen^{1

2}, Rui Zhai^{1

2}, You Wu^{1

2}, Zhuan Zhao^{1

2

4}, Shusheng Pan^{1

2

4}

Affiliations

¹ School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China.
² Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou 510006, China.
³ Songshan Lake Materials Laboratory, Dongguan 523808, China.
⁴ Key Lab of Si-Based Information Materials & Devices and Integrated Circuits Design, Department of Education of Guangdong Province, Guangzhou 510006, China.

Abstract

In this study, quasi-two-dimensional Bi_xSn_1-xO₂ (BTO) thin films were fabricated using a liquid metal transfer method. The ultraviolet (UV) photodetector based on BTO thin films was constructed, and the ultrahigh responsivity of 589 A/W was observed at 300 nm UV light illumination. Interestingly, by dropping ethanol during light-off period, the recovery time induced by the persistent photoconductivity (PPC) effect is reduced from 1.65 × 10³ s to 5.71 s. Furthermore, the recovery time can also be reduced by dropping methanol, propylene glycol, NaNO₂, and Na₂SO₃ after light termination. The working mechanisms are attributed to the rapid consumption of holes stored in BTO thin films by reaction with those solutions. This work demonstrates that the BTO thin films have potential applications in high-performance UV detectors and present an innovation route to weaken the PPC effects in semiconductors by introducing chemical liquids on their surface.

Keywords: Bi-doped SnO2 (BTO); quasi-two-dimensional materials; responsivity; surface reaction.

Abstract

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