The third-generation semiconductor gallium nitride (GaN) has drawn wide attention due to its high electron mobility property. However, the classical mobility calculation methods such as Hall effect and transfer length method have limitations in accurately extracting the mobility of GaN High Electron Mobility Transistor (HEMT) due to their inability to consider the resistance in non-gate region or their high fabrication costs. This work proposes an effective yet accurate computational-fitting method for extracting the mobility of GaN HEMT. The method consists of measuring the total resistance between source and drain at different gate voltages over a very small range of overdrive voltage variations, when the sum of the transconductance and capacitance of the device is regarded as constants, and fitting a unique function of the total resistance with respect to the overdrive voltage to determine the carrier mobility and the non-gate resistance. The feasibility and reliability of the method has been also verified.
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