Correction: Self-limiting stoichiometry in SnSe thin films

Jonathan R Chin; Marshall B Frye; Derrick Shao-Heng Liu; Maria Hilse; Ian C Graham; Jeffrey Shallenberger; Ke Wang; Roman Engel-Herbert; Mengyi Wang; Yun Kyung Shin; Nadire Nayir; Adri C T van Duin; Lauren M Garten

doi:10.1039/d3nr90187d

Correction: Self-limiting stoichiometry in SnSe thin films

Nanoscale. 2023 Nov 2;15(42):17216. doi: 10.1039/d3nr90187d.

Authors

Affiliations

¹ The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA. lauren.garten@mse.gatech.edu.
² Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
³ Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
⁴ Paul-Drude Institut für Festkörperelektronik Berlin, Leibniz-Institut im Forschungsverbund Berlin eV., Berlin 10117, Germany.
⁵ Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
⁶ Physics Department, Karamanoglu Mehmetbey University, Karaman, 70000, Turkey.

PMID: 37877894
DOI: 10.1039/d3nr90187d

Abstract

Correction for 'Self-limiting stoichiometry in SnSe thin films' by Jonathan R. Chin et al., Nanoscale, 2023, 15, 9973-9984, https://doi.org/10.1039/D3NR00645J.

Publication types

Published Erratum