High-energy-resolution angle-resolved inverse-photoelectron spectroscopy apparatus for damage-free measurements of conduction band structures of functional materials

Yuki Kashimoto; Satoshi Ideta; Haruki Sato; Hibiki Orio; Keita Kawamura; Hiroyuki Yoshida

doi:10.1063/5.0138204

High-energy-resolution angle-resolved inverse-photoelectron spectroscopy apparatus for damage-free measurements of conduction band structures of functional materials

Rev Sci Instrum. 2023 Jun 1;94(6):063903. doi: 10.1063/5.0138204.

Authors

Yuki Kashimoto¹, Satoshi Ideta¹, Haruki Sato¹, Hibiki Orio¹, Keita Kawamura¹, Hiroyuki Yoshida^{1

2

3}

Affiliations

¹ Graduate School of Science and Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
² Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
³ Molecular Chirality Research Center, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.

PMID: 37862500
DOI: 10.1063/5.0138204

Abstract

The energy band structure of the conduction band (energy-momentum relation of electrons) is crucial to understanding the electron transport of crystalline materials. In this paper, we describe an angle-resolved low-energy inverse photoelectron spectroscopy (AR-LEIPS) apparatus that examines the conduction band structures of materials sensitive to the electron beam, such as organic semiconductors and organic-inorganic hybrid perovskites. The principle of this apparatus is based on AR inverse photoelectron spectroscopy. To minimize radiation damage and improve energy resolution, we employed our previous approach used in LEIPS [H. Yoshida, Chem. Phys. Lett. 539-540, 180 (2012)]. We obtained an overall energy resolution of 0.23 eV with a momentum resolution of 0.9 nm-1 at the electron kinetic energy of 2 eV or higher.