In the era of fifth-generation networks and Internet-of-Things, the use of multiband electromagnetic radiation shielding is highly desirable for next-generation electronic devices. Herein, we report a systematic exploration of optoelectronic behaviors of ultrathin-silver-based shielding prototype (USP) film structures at the nanometer scale, unlocking the transparent ultrabroadband electromagnetic interference (EMI) shielding from microwave to terahertz frequencies. A theoretical model is proposed to optimize USP structures to achieve increased transparency, whereby optical antireflection resonances are introduced in dielectrics in conjunction with remarkable EMI shielding capability. USP can realize a state-of-the-art effective electromagnetic radiation shielding bandwidth with measured frequencies from 8 GHz up to 2 THz. Experimental results show that a basic USP (dAg = 10 nm) offers an average shielding efficiency of ∼27.5 dB from the X- to Ka-bands (8-40 GHz) and maintains a stable shielding performance of ∼22.6 dB across a broad range of 0.5-2 THz, with a measured optical transmittance of ∼95.2%. This extraordinary performance of ultrathin-silver-based film structures provides a new ultrabroadband EMI shielding paradigm for potential applications in next-generation electronics.
Keywords: EMI shielding; THz radiation shielding; high optical transparency; microwave radiation shielding; ultrathin silver film.