When two-dimensional (2D) materials are stacked into van der Waals structures, interlayer electronic coupling can induce excellent properties in energy storage materials. Here, we investigate the interlayer coupling of the FeN/Fe2B2 heterojunction as an anode material, which is constructed using vertically planar FeN and puckered Fe2B2 nanosheets. These structures were searched by the CALYPSO method and computed by density functional theory calculations. The stabilities of the FeN monolayer, Fe2B2 monolayer, and FeN/Fe2B2 heterojunction were tested in terms of dynamics, mechanics, and thermodynamics, respectively. These structures have good performances as anode materials, including the capacities of the FeN (Fe2B2) monolayer of 9207 mA h g-1 (2713 mA h g-1) and 3069 mA h g-1 (1005 mA h g-1) for Al and Li, respectively. The stable FeN/Fe2B2 heterojunction shows extremely low diffusion barriers of 0.01 eV, a high Al ion capacity of 4254 mA h g-1, and relatively low voltages. Hess's law revealed that the interlayer electronic coupling impacts the adsorption process of the FeN layer in the FeN/Fe2B2 heterojunction, which decreases the pz orbital of the N atom for the heterojunction. The unequal distribution of electrons between the layers results in interlayer polarization; the value of interlayer polarization was quantitatively calculated to be 0.64 pC m-1. The presence of adsorbed Li and Al atoms between the layers helps maintain the original structure and prevents the interlayer sliding from damaging the heterojunction. These findings offer insights for understanding the structural and electronic properties of the FeN/Fe2B2 heterojunction, which provides crucial information for rational design and advanced synthesis of novel electrode materials.