Multiple approaches of band engineering and mass fluctuation of solution-processed n-type Re-doped MoS2 nanosheets for enhanced thermoelectric power factor

M Arockia Jenisha; S Kavirajan; S Harish; S Kamalakannan; J Archana; E Senthil Kumar; Naoki Wakiya; M Navaneethan

doi:10.1016/j.jcis.2023.08.201

Multiple approaches of band engineering and mass fluctuation of solution-processed n-type Re-doped MoS₂ nanosheets for enhanced thermoelectric power factor

J Colloid Interface Sci. 2024 Jan;653(Pt B):1150-1165. doi: 10.1016/j.jcis.2023.08.201. Epub 2023 Sep 3.

Authors

M Arockia Jenisha¹, S Kavirajan², S Harish³, S Kamalakannan², J Archana², E Senthil Kumar⁴, Naoki Wakiya⁵, M Navaneethan⁶

Affiliations

¹ Nanotechnology Research Center (NRC), Faculty of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India; Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India.
² Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India.
³ Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India; Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu,Shizuoka, 432-8011, Japan.
⁴ Nanotechnology Research Center (NRC), Faculty of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India.
⁵ Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu,Shizuoka, 432-8011, Japan.
⁶ Nanotechnology Research Center (NRC), Faculty of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India; Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India. Electronic address: navaneem@srmist.edu.in.

PMID: 37788583
DOI: 10.1016/j.jcis.2023.08.201

Abstract

The thermoelectric (TE) performance of Molybdenum disulpide (MoS₂) can be improved by the incorporation of nanomaterials. MoS₂ has been reported as promising thermoelectric materials due to their large bandgap and low thermal conductivity. In the present work, n-type MoS₂ was successfully synthesized by facile hydrothermal route with an excellent thermoelectric performance by introducing rhenium (Re) dopant. The structural and morphological analyses confirmed the incorporation of Re into Mo (Molybdenum) lattice. The thermoelectric results showed that both the electrical conductivity (σ) and Seebeck coefficient (S) has been increased with the increase in Re content (2.5, 5, 7.5 and 10 at%) and temperature (303 K to 700 K), while the thermal conductivity (κ) was low. Doping with Re on MoS₂ enhances the electrical conductivity through band engineering, improving carrier concentration and shifting the Fermi level to the conduction band. Introducing a heavy atomic element can reduce the total thermal conductivity by facilitating mass fluctuation. The maximum Seebeck coefficient was obtained as -100 μVK^-1 at 500 K for Re 5 at% sample, which is 3.7 times greater than undoped MoS₂. In addition, introducing electrons through Re doping induced bipolar conduction. These enhancements have increased the power factor of 8 μWm^-1K^-2 at 650 K.

Keywords: Band engineering; Bipolar conduction; Hydrothermal method; Re-doped MoS(2); Thermoelectric.