Bilayer phosphine oxide modification toward efficient and large-area pure-blue perovskite quantum dot light-emitting diodes

Fang Chen; Yanliang Liu; Dingshuo Zhang; Xinyi Jiang; Peiqing Cai; Junjie Si; Qianqing Hu; Zhishan Fang; Xingliang Dai; Jizhong Song; Zhizhen Ye; Haiping He

doi:10.1016/j.scib.2023.09.014

Bilayer phosphine oxide modification toward efficient and large-area pure-blue perovskite quantum dot light-emitting diodes

Sci Bull (Beijing). 2023 Oct 30;68(20):2354-2361. doi: 10.1016/j.scib.2023.09.014. Epub 2023 Sep 12.

Authors

Fang Chen¹, Yanliang Liu², Dingshuo Zhang³, Xinyi Jiang³, Peiqing Cai⁴, Junjie Si⁴, Qianqing Hu⁴, Zhishan Fang³, Xingliang Dai⁵, Jizhong Song⁶, Zhizhen Ye⁷, Haiping He⁸

Affiliations

¹ School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China; Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China; Wenzhou XINXINTAIJING Tech. Co. Ltd., Wenzhou 325006, China.
² Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China.
³ School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.
⁴ College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, China.
⁵ School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China; Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China; Wenzhou XINXINTAIJING Tech. Co. Ltd., Wenzhou 325006, China; Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030002, China. Electronic address: shanfeng@zju.edu.cn.
⁶ School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China. Electronic address: songjizhong@njust.edu.cn.
⁷ School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China; Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China; Wenzhou XINXINTAIJING Tech. Co. Ltd., Wenzhou 325006, China; Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030002, China.
⁸ School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China; Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China; Wenzhou XINXINTAIJING Tech. Co. Ltd., Wenzhou 325006, China; Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030002, China. Electronic address: hphe@zju.edu.cn.

PMID: 37730508
DOI: 10.1016/j.scib.2023.09.014

Abstract

Blue emissive halide perovskite light-emitting diodes (LEDs) are gaining increasing attention. Reducing defects in halide perovskites to improve the performance of the resulting LEDs is a main research direction, but there are limited passivation methods for achieving efficient and spectrally-stable pure-blue LEDs based on mixed-halide perovskites. In this work, double modification layers containing phosphine oxides, i.e., diphenyl[4-(triphenylsilyl)phenyl]phosphine oxide (TSPO1) and 2,7-bis(diphenylphosphoryl)-9,9'-spirobifluorene (SPPO13), are developed to passivate mixed-halide perovskite quantum dot (QD) films. The comprehensive spectroscopic and structural characterization results indicate the presence of strong interactions between TSPO1/SPPO13 and the QDs. Besides, the combination of the bilayer exhibits a synergistic hole-blocking effect, improving the charge balance of the LEDs. LEDs based on the QD/TSPO1/SPPO13 films deliver stable electroluminesence at 469 nm and present a maximum external quantum efficiency (EQE) and luminance of 4.87% and 560 cd m^-2, respectively. Benefiting from the uniform QD/TSPO1/SPPO13 film over a large area, LEDs with an area of 64 mm² show a maximum EQE of 3.91%, which represents the first efficient large-area mixed-halide perovskite LED with stable pure-blue emission. This work provides a method to improve the perovskite QDs-based film quality and optoelectronic properties, and is a step toward the fabrication of highly-efficient large-area blue perovskite LEDs.

Keywords: Large-area device; Light-emitting diode; Perovskite quantum dot; Phosphine oxide passivation; Pure-blue emission.