Mask model is a critical part of computational lithography (CL). Owing to the significant 3D mask effects, it is challenging to accurately and efficiently calculate the near field of extreme ultraviolet (EUV) masks with complex patterns. Therefore, a method based on the modified Born series (MBS) was introduced for EUV mask modeling. With comparable accuracy, the MBS method was two orders of magnitude faster than the finite-difference time-domain method for the investigated examples. Furthermore, the time required for MBS was further reduced when the mask pattern was slightly changed. The proposed method shows great potential for constructing an accurate 3D mask model in EUV CL with high efficiency.