Large-scale and stacked transfer of bilayers MoS2devices on a flexible polyimide substrate

Xiaojiao Guo; Die Wang; Dejian Zhang; Jingyi Ma; Xinyu Wang; Xinyu Chen; Ling Tong; Xinzhi Zhang; Junqiang Zhu; Peng Yang; Saifei Gou; Xiaofei Yue; Chuming Sheng; Zihan Xu; Zhenghua An; Zhijun Qiu; Chunxiao Cong; Peng Zhou; Zhiqiang Fang; Wenzhong Bao

doi:10.1088/1361-6528/acf6c2

Large-scale and stacked transfer of bilayers MoS₂devices on a flexible polyimide substrate

Nanotechnology. 2023 Nov 6;35(4). doi: 10.1088/1361-6528/acf6c2.

Authors

Xiaojiao Guo^{1

2

3}, Die Wang¹, Dejian Zhang⁴, Jingyi Ma¹, Xinyu Wang¹, Xinyu Chen¹, Ling Tong¹, Xinzhi Zhang⁵, Junqiang Zhu⁶, Peng Yang⁷, Saifei Gou¹, Xiaofei Yue⁶, Chuming Sheng¹, Zihan Xu⁸, Zhenghua An⁵, Zhijun Qiu⁶, Chunxiao Cong⁶, Peng Zhou¹, Zhiqiang Fang⁴, Wenzhong Bao¹

Affiliations

¹ State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.
² Center for Integrated Quantum Information Technologies (IQIT), School of Physics and Astronomy and State Key Laboratory of Advanced Optical Communication Systems and Network, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
³ Chip Hub for Integrated Photonics Xplore (CHIPX), Shanghai Jiao Tong University, Wuxi 214000, People's Republic of China.
⁴ State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, People's Republic of China.
⁵ Department of Physics, State Key Laboratory of Surface Physics, Institute of Nanoelectronic Devices and Quantum Computing and Key Laboratory of Micro, Fudan University, Shanghai 200433, People's Republic of China.
⁶ State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, People's Republic of China.
⁷ College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, People's Republic of China.
⁸ Shenzhen Six Carbon Technology, Shenzhen 518055, People's Republic of China.

PMID: 37669634
DOI: 10.1088/1361-6528/acf6c2

Abstract

Two-dimensional transition metal dichalcogenides (TMDs), as flexible and stretchable materials, have attracted considerable attention in the field of novel flexible electronics due to their excellent mechanical, optical, and electronic properties. Among the various TMD materials, atomically thin MoS₂has become the most widely used material due to its advantageous properties, such as its adjustable bandgap, excellent performance, and ease of preparation. In this work, we demonstrated the practicality of a stacked wafer-scale two-layer MoS₂film obtained by transferring multiple single-layer films grown using chemical vapor deposition. The MoS₂field-effect transistor cell had a top-gated device structure with a (PI) film as the substrate, which exhibited a high on/off ratio (10⁸), large average mobility (∼8.56 cm²V^-1s^-1), and exceptional uniformity. Furthermore, a range of flexible integrated logic devices, including inverters, NOR gates, and NAND gates, were successfully implemented via traditional lithography. These results highlight the immense potential of TMD materials, particularly MoS₂, in enabling advanced flexible electronic and optoelectronic devices, which pave the way for transformative applications in future-generation electronics.

Keywords: CVD MoS2; logic devices; stacked multilayers; transfer method; transistors.