A B- and F-enriched buffering interphase enables a high-rate and high-stability SiOx/C anode

Zhaoyu Zhang; Yufei Zhang; Minghui Ye; Yongchao Tang; Zhipeng Wen; Xiaoqing Liu; Cheng Chao Li

doi:10.1039/d3cc03427e

A B- and F-enriched buffering interphase enables a high-rate and high-stability SiO_x/C anode

Chem Commun (Camb). 2023 Sep 12;59(73):10980-10983. doi: 10.1039/d3cc03427e.

Authors

Zhaoyu Zhang¹, Yufei Zhang¹, Minghui Ye¹, Yongchao Tang¹, Zhipeng Wen¹, Xiaoqing Liu¹, Cheng Chao Li¹

Affiliation

¹ Guangdong Provincial Key Laboratory of Plant Resources Biorefinery, School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, China. licc@gdut.edu.cn.

PMID: 37615034
DOI: 10.1039/d3cc03427e

Abstract

A facile, universal surface engineering strategy is proposed to address the volume expansion and slow kinetic issues encountered by SiO_x/C anodes. A B-/F-enriched buffering interphase is introduced onto SiO_x/C by thermal treatment of pre-adsorbed lithium salts at 400 °C. The as-prepared anode integrates both high-rate performance and long-term cycling durability.