Microscopic investigation of intrinsic defects in CVD grown MoS2monolayers

Ana Senkić; Antonio Supina; Mert Akturk; Christoph Gadermaier; Margherita Maiuri; Giulio Cerullo; Nataša Vujičić

doi:10.1088/1361-6528/acf29b

Microscopic investigation of intrinsic defects in CVD grown MoS₂monolayers

Nanotechnology. 2023 Sep 6;34(47). doi: 10.1088/1361-6528/acf29b.

Authors

Ana Senkić^{1

2}, Antonio Supina^{1

2}, Mert Akturk³, Christoph Gadermaier³, Margherita Maiuri³, Giulio Cerullo^{3

4}, Nataša Vujičić¹

Affiliations

¹ Centre for Advanced Laser Techniques, Institute of Physics, 10 000 Zagreb, Croatia.
² Faculty of Physics, University of Rijeka, 51 000 Rijeka, Croatia.
³ Politecnico di Milano, Physics Department, I-20133 Milan, Italy.
⁴ Istituto di Fotonica e Nanotecnologie-CNR, I-20133 Milan, Italy.

PMID: 37607501
DOI: 10.1088/1361-6528/acf29b

Abstract

Defects in two-dimensional (2D) transition metal dichalcogenides (TMDs) greatly influence their electronic and optical properties by introducing localized in-gap states. Using different non-invasive techniques, we have investigated the spatial distribution of intrinsic defects in as-grown chemical vapor deposition (CVD) MoS₂monolayers and correlated the results with the growth temperature of the sample. We have shown that by increasing the CVD growth temperature the concentration of defects decreases and their spatial distribution and type change, influencing the sample's electronic and optical properties.

Keywords: MoS2; crystal quality; defects; femtosecond spectroscopy; kelvin probe force microscopy; photoluminescence; ultrafast dynamics.