Photoconduction Properties in Tungsten Disulfide Nanostructures

Hemanth Kumar Bangolla; Yueh-Chien Lee; Wei-Chu Shen; Rajesh Kumar Ulaganathan; Raman Sankar; He-Yun Du; Ruei-San Chen

doi:10.3390/nano13152190

Photoconduction Properties in Tungsten Disulfide Nanostructures

Nanomaterials (Basel). 2023 Jul 27;13(15):2190. doi: 10.3390/nano13152190.

Authors

Hemanth Kumar Bangolla¹, Yueh-Chien Lee², Wei-Chu Shen³, Rajesh Kumar Ulaganathan⁴, Raman Sankar⁴, He-Yun Du⁵, Ruei-San Chen¹

Affiliations

¹ Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan.
² Department of Electronic Engineering, Lunghwa University of Science and Technology, Taoyuan 33306, Taiwan.
³ Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan.
⁴ Institute of Physics, Academia Sinica, Taipei 115201, Taiwan.
⁵ Department of Chemical Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan.

Abstract

We reported the photoconduction properties of tungsten disulfide (WS₂) nanoflakes obtained by the mechanical exfoliation method. The photocurrent measurements were carried out using a 532 nm laser source with different illumination powers. The results reveal a linear dependence of photocurrent on the excitation power, and the photoresponsivity shows an independent behavior at higher light intensities (400-4000 Wm^-2). The WS₂ photodetector exhibits superior performance with responsivity in the range of 36-73 AW^-1 and a normalized gain in the range of 3.5-7.3 10^-6 cm²V^-1 at a lower bias voltage of 1 V. The admirable photoresponse at different light intensities suggests that WS₂ nanostructures are of potential as a building block for novel optoelectronic device applications.

Keywords: nanoflake; normalized gain; photoconductivity; photodetector; responsivity; tungsten disulfide.

Abstract

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