Graphyne has attractive electronic properties that make it a possible replacement of silicon in FET technology. In FET technology, the goal is to achieve low power dissipation and lower subthreshold swing. In this study, we focused on achieving these goals and studied the electronic properties of α-graphyne nanoribbons. We simulated the transfer and output characteristics of an α-graphyne ballistic nanoribbon FET. We used the tight-binding model with nearest-neighbor approximation to obtain the band structure which gives the same band structure as the one found from the DFT. In order to simulate the I-V characteristics of the transistor we used the non-equilibrium Green's function (NEGF) formalism. The results show that the modeled FET can provide a high Ion/Ioff ratio and low subthreshold swing. We also studied the effects of defects as defects cannot be avoided in any practical device. The study shows that the Ion/Ioff ratio and subthreshold swing improves as defects are added, but the delay time and dynamic power dissipation worsen.
Keywords: ballistic field effect transistor (FET); edge defect; graphyne nanoribbon; non-equilibrium Green’s function (NEGF); single vacancy defect; tight binding model; α-graphyne nanoribbon.