Staggered-layer-boosted flexible Bi2Te3 films with high thermoelectric performance

Abstract

Room-temperature bismuth telluride (Bi₂Te₃) thermoelectrics are promising candidates for low-grade heat harvesting. However, the brittleness and inflexibility of Bi₂Te₃ are far reaching and bring about lifelong drawbacks. Here we demonstrate good pliability over 1,000 bending cycles and high power factors of 4.2 (p type) and 4.6 (n type) mW m^-1 K^-2 in Bi₂Te₃-based films that were exfoliated from corresponding single crystals. This unprecedented bendability was ascribed to the in situ observed staggered-layer structure that was spontaneously formed during the fabrication to promote stress propagation whilst maintaining good electrical conductivity. Unexpectedly, the donor-like staggered layer rarely affected the carrier transport of the films, thus maintaining its superior thermoelectric performance. Our flexible generator showed a high normalized power density of 321 W m^-2 with a temperature difference of 60 K. These high performances in supple thermoelectric films not only offer useful paradigms for wearable electronics, but also provide key insights into structure-property manipulation in inorganic semiconductors.