Enhanced photoconductivity of hybrid 2D-QD MoS2-AgInS2 structures

Serhiy Kondratenko; Oleksandr I Datsenko; Danylo Babich; Volodymyr Dzhagan; Yang Pan; Mahfujur Rahaman; Oleksandr Selyshchev; Dietrich R T Zahn

doi:10.1063/5.0148220

Enhanced photoconductivity of hybrid 2D-QD MoS2-AgInS2 structures

J Chem Phys. 2023 Jul 28;159(4):044707. doi: 10.1063/5.0148220.

Authors

Serhiy Kondratenko¹, Oleksandr I Datsenko¹, Danylo Babich¹, Volodymyr Dzhagan^{1

2}, Yang Pan^{3

4}, Mahfujur Rahaman³, Oleksandr Selyshchev^{3

4}, Dietrich R T Zahn^{3

4}

Affiliations

¹ Taras Shevchenko National University of Kyiv, 64 Volodymyrs'ka St., 01601 Kyiv, Ukraine.
² V.E. Lashkaryov Institute of Semiconductors Physics, NAS of Ukraine, 41 pr. Nauki, 03028 Kyiv, Ukraine.
³ Semiconductor Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany.
⁴ Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09107 Chemnitz, Germany.

PMID: 37493129
DOI: 10.1063/5.0148220

Abstract

This study describes the fabrication of hybrid two-dimensional (2D)-quantum dot (QD) MoS2-AgInS2 photoconductive devices through the mechanical pressing of a MoS2 flake onto an AgInS2 QD film. The devices exhibit an enhanced photoresponse at both continuous and modulated optical excitations, compared with the bare MoS2 or AgInS2 layer, due to the formation of a built-in electric field near the MoS2/AgInS2 interface. The continuous wave photoresponse is significantly higher due to the effective photoconductive gain when electrons flow freely through the MoS2 flake, whereas holes are effectively trapped in AgInS2 QDs. The study highlights the potential of hybrid 2D-QD MoS2-AgInS2 devices for photovoltaic and optoelectronic applications.