Improvement of image-type very-low-energy-electron-diffraction spin polarimeter

Heming Zha; Wenjing Liu; Deyang Wang; Bo Zhao; Xiaoping Shen; Mao Ye; Shan Qiao

doi:10.1063/5.0142548

Improvement of image-type very-low-energy-electron-diffraction spin polarimeter

Rev Sci Instrum. 2023 Jul 1;94(7):073704. doi: 10.1063/5.0142548.

Authors

Heming Zha^{1

2}, Wenjing Liu^{1

2}, Deyang Wang^{1

2}, Bo Zhao³, Xiaoping Shen⁴, Mao Ye^{1

2

3}, Shan Qiao^{1

2

5}

Affiliations

¹ Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
² Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
³ Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, People's Republic of China.
⁴ Department of Physics, State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, People's Republic of China.
⁵ School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China.

PMID: 37449894
DOI: 10.1063/5.0142548

Abstract

Spin- and angle-resolved photoemission spectroscopy (SARPES) with high efficiency and resolution plays a crucial role in exploring the fine spin-resolved band structures of quantum materials. Here, we report the performance of the SARPES instrument with a second-generation home-made multichannel very-low-energy-electron-diffraction spin polarimeter. Its energy and angular resolutions achieve 7.2 meV and 0.52°, respectively. We present the results of SARPES measurements of Bi(111) film to demonstrate its performance. Combined with the density functional theory calculations, the spin polarization of the bulk states was confirmed by the spin-layer locking caused by the local inversion asymmetry. The surface states at a binding energy of 0.77 eV are found with 1.0 ± 0.11 spin polarization. Better resolutions and stability compared with the first-generation one provide a good platform to investigate the spin-polarized electronic states in materials.

MeSH terms

Electrons*
Physical Phenomena