Chalcogenide vitreous semiconductors (ChVSs) find application in rewritable optical memory storage and optically switchable infrared photonic devices due to the possibility of fast and reversible phase transitions, as well as high refractive index and transmission in the near- and mid-infrared spectral range. Formed on such materials, laser-induced periodic surface structures (LIPSSs), open wide prospects for increasing information storage capacity and create polarization-sensitive optical elements of infrared photonics. In the present work, a possibility to produce LIPSSs under femtosecond laser irradiation (pulse duration 300 fs, wavelength 515 nm, repetition rate up to 2 kHz, pulse energy ranged 0.03 to 0.5 μJ) is demonstrated on a large (up to 5 × 5 mm2) area of arsenic sulfide (As2S3) and arsenic selenide (As2Se3) ChVS films. Scanning electron and atomic force microscopy revealed that LIPSSs with various periods (170-490 nm) and orientations can coexist within the same irradiated region as a hierarchical structure, resulting from the interference of various plasmon polariton modes generated under intense photoexcitation of nonequilibrium carriers within the film. The depth of the structures varied from 30 to 100 nm. The periods and orientations of the formed LIPSSs were numerically simulated using the Sipe-Drude approach. A good agreement of the calculations with the experimental data was achieved.
Keywords: arsenic selenide; arsenic sulfide; femtosecond laser modification; hierarchical laser-induced periodic surface structures; surface plasmon polaritons.