Synthesis and Broadband Photodetection of a P-Type 1D Van der Waals Semiconductor HfSnS3

Yang Lu; Wenzhi Yu; Yan Zhang; Junrong Zhang; Cheng Chen; Yongping Dai; Xingang Hou; Zhuo Dong; Liu Yang; Long Fang; Luyi Huang; Shenghuang Lin; Junyong Wang; Jun Wang; Jie Li; Kai Zhang

doi:10.1002/smll.202303903

Synthesis and Broadband Photodetection of a P-Type 1D Van der Waals Semiconductor HfSnS₃

Small. 2023 Nov;19(44):e2303903. doi: 10.1002/smll.202303903. Epub 2023 Jun 28.

Authors

Yang Lu^{1

2}, Wenzhi Yu³, Yan Zhang¹, Junrong Zhang¹, Cheng Chen¹, Yongping Dai⁴, Xingang Hou¹, Zhuo Dong¹, Liu Yang¹, Long Fang^{1

5}, Luyi Huang¹, Shenghuang Lin³, Junyong Wang¹, Jun Wang⁶, Jie Li¹, Kai Zhang¹

Affiliations

¹ CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, 215123, China.
² Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123, China.
³ Songshan Lake Materials Laboratory, Guangdong, 523000, China.
⁴ Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, 100084, China.
⁵ College of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot, 010051, China.
⁶ School of Electrical Engineering and Automation, Wuhan University, Wuhan, Hubei, 430072, China.

PMID: 37381092
DOI: 10.1002/smll.202303903

Abstract

1D van der Waals (vdW) materials have attracted significant interest in recent years due to their giant anisotropic and weak interlayer-coupled characters. More 1D vdW materials are urgently to be exploited for satisfying the practice requirement. Herein, the study of 1D vdW ternary HfSnS₃ high-quality single crystals grown via the chemical vapor transport technique is reported. The Raman vibration modes and band structure of HfSnS₃ are analyzed via DFT calculations. Its strong in-plane anisotropic is verified by the polarized Raman spectroscopy. The field-effect transistors (FETs) based on the HfSnS₃ nanowires demonstrate p-type semiconducting behavior as well as outstanding photoresponse in a broadband range from UV to near-infrared (NIR) with short response times of ≈0.355 ms, high responsivity of ≈11.5 A W^-1 , detectivity of ≈8.2 × 10¹¹ , external quantum efficiency of 2739%, excellent environmental stability, and repeatability. Furthermore, a typical photoconductivity effect of the photodetector is illustrated. These comprehensive characteristics can promote the application of the p-type 1D vdW material HfSnS₃ in optoelectronics.

Keywords: 1D van der waals materials; HfSnS3; broadband photodetection; p-type semiconductors.

Abstract

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